ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS OBTAINED WITH SELECTIVE OXIDATION

被引：249

作者：

YANG, GM

MACDOUGAL, MH

DAPKUS, PD

机构：

[1] Department of Electrical Engineering/Electrophysics, University of Southern California, Los Angeles

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 11期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; OXIDATION;

D O I：

10.1049/el:19950610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report InGaAs single quantum well vertical-cavity surface-emitting lasers with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs). Record low threshold currents of 8.7 mu A in similar to 3 mu m square devices and 140 mu A in 10 mu m square devices with maximum output powers over 1.2mW are achieved.

引用

收藏

页码：886 / 888

页数：3

相关论文

共 11 条

[1] LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].

CHOQUETTE, KD ;

SCHNEIDER, RP ;

LEAR, KL ;

GEIB, KM .

ELECTRONICS LETTERS, 1994, 30 (24) :2043-2044

[2] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].

DALLESASSE, JM ;

HOLONYAK, N ;

SUGG, AR ;

RICHARD, TA ;

ELZEIN, N .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846

[3] LOW-THRESHOLD HALF-WAVE VERTICAL-CAVITY LASERS [J].

HUFFAKER, DL ;

SHIN, J ;

DEPPE, DG .

ELECTRONICS LETTERS, 1994, 30 (23) :1946-1947

[4] NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS [J].

HUFFAKER, DL ;

DEPPE, DG ;

KUMAR, K ;

ROGERS, TJ .

APPLIED PHYSICS LETTERS, 1994, 65 (01) :97-99

[5] SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH 50-PERCENT POWER CONVERSION EFFICIENCY [J].

LEAR, KL ;

CHOQUETTE, KD ;

SCHNEIDER, RP ;

KILCOYNE, SP ;

GEIB, KM .

ELECTRONICS LETTERS, 1995, 31 (03) :208-209

[6] ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS OXIDE-GAAS DISTRIBUTED BRAGG REFLECTORS [J].

MACDOUGAL, MH ;

DAPKUS, PD ;

PUDIKOV, V ;

ZHAO, HM ;

YANG, GM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (03) :229-231

[7] WIDE-BANDWIDTH DISTRIBUTED BRAGG REFLECTORS USING OXIDE GAAS MULTILAYERS [J].

MACDOUGAL, MH ;

ZHAO, H ;

DAPKUS, PD ;

ZIARI, M ;

STEIER, WH .

ELECTRONICS LETTERS, 1994, 30 (14) :1147-1149

[8] PHOTOPUMPED ROOM-TEMPERATURE EDGE-CAVITY AND VERTICAL-CAVITY OPERATION OF ALGAAS-GAAS-INGAAS QUANTUM-WELL HETEROSTRUCTURE LASERS UTILIZING NATIVE-OXIDE MIRRORS [J].

RIES, MJ ;

RICHARD, TA ;

MARANOWSKI, SA ;

HOLONYAK, N ;

CHEN, EI .

APPLIED PHYSICS LETTERS, 1994, 65 (06) :740-742

[9] SPONTANEOUS EMISSION FACTOR AND ITS SCALING IN VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

SHTENGEL, G ;

TEMKIN, H ;

UCHIDA, T ;

KIM, M ;

BRUSENBACH, P ;

PARSONS, C .

APPLIED PHYSICS LETTERS, 1994, 64 (09) :1062-1064

[10] MICRO-CAVITY SEMICONDUCTOR-LASERS WITH CONTROLLED SPONTANEOUS EMISSION [J].

YAMAMOTO, Y ;

MACHIDA, S ;

BJORK, G .

OPTICAL AND QUANTUM ELECTRONICS, 1992, 24 (02) :S215-S243