Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals

被引：127

作者：

Nakai, K ^{[1
]}

Inoue, Y ^{[1
]}

Yokota, H ^{[1
]}

Ikari, A ^{[1
]}

Takahashi, J ^{[1
]}

Tachikawa, A ^{[1
]}

Kitahara, K ^{[1
]}

Ohta, Y ^{[1
]}

Ohashi, W ^{[1
]}

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Labs, Yamaguchi 7430063, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.1356425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen precipitate behavior of nitrogen-doped Czochralski-grown silicon (CZ-Si) crystals is investigated. It is found that nitrogen doping enhances oxygen precipitation after heat treatment. The oxygen precipitate volume density in nitrogen-doped crystals after heat treatment does not change regardless of the heat treatment temperature, while the oxygen precipitate volume density of crystals which are not nitrogen doped decreases as the heat-treatment temperature increases. The characteristics of precipitation behavior in nitrogen-doped CZ-Si crystals are due to the "grown-in" oxygen precipitates, which already exist in an as-grown state with a high volume density. The oxygen precipitation growth of nitrogen-doped crystals is found to be an oxygen diffusion limited process, the same as in the case of the oxygen precipitation growth of crystals which are not nitrogen doped. The formation mechanism of grown-in oxygen precipitates will also be discussed in this article. (C) 2001 American Institute of Physics.

引用

页码：4301 / 4309

页数：9

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