In spite of recent doubts carrier multiplication does occur in PbSe nanocrystals

被引：271

作者：

Trinh, M. Tuan ^{[1
]}

Houtepen, Arian J. ^{[1
]}

Schins, Juleon M. ^{[1
]}

Hanrath, Tobias ^{[2
]}

Piris, Jorge ^{[1
]}

Knulst, Walter ^{[1
]}

Goossens, Albert P. L. M. ^{[1
]}

Siebbeles, Laurens D. A. ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Sci Appl, NL-2628 BL Delft, Netherlands

[2] Cornell Univ, Sch Chem & Biomol Engn, New York, NY 10021 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 06期

关键词：

D O I：

10.1021/nl0807225

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Efficient carrier multiplication has been reported for several semiconductor nanocrystals: PbSe, PbS, PbTe, CdSe, InAs, and Si. Some of these reports have been challenged by studies claiming that carrier multiplication does not occur in CdSe, CdTe, and InAs nanocrystals, thus raising legitimate doubts concerning the occurrence of carrier multiplication in the remaining materials. Here, conclusive evidence is given for its occurrence in PbSe nanocrystals using femtosecond transient photobleaching. In addition, it is shown that a correct determination of carrier-multiplication efficiency requires spectral integration over the photobleach feature. The carrier multiplication efficiency we obtain is significantly lower than what has been reported previously, and it remains an open question whether it is higher in nanocrystals than it is in bulk semiconductors.

引用

页码：1713 / 1718

页数：6

共 28 条

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