Non-poissonian exciton populations in semiconductor nanocrystals via carrier multiplication

被引：59

作者：

Schaller, RD ^{[1
]}

Klimov, VI ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Div Chem, CPCS, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.96.097402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We analyze distributions of exciton populations in PbSe nanocrystal (NC) ensembles as a function of excitation wavelength. For photon energies that result in carrier multiplication, these distributions are non-Poissonian and are characterized by two dominant exciton multiplicities that are determined by the ratio of photon energy to NC energy gap. For certain photon energies, we produce photoexcited NC ensembles with a nearly pure single multiplicity that can be tuned from 1 to 7. This result can find applications ranging from lasing and nonlinear optics to photovoltaics and photocatalysis.

引用

页数：4

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