Multi-excitons in self-assembled InAs/GaAs quantum dots: A pseudopotential, many-body approach

被引:32
作者
Williamson, AJ [1 ]
Franceschetti, A [1 ]
Zunger, A [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
EUROPHYSICS LETTERS | 2001年 / 53卷 / 01期
关键词
D O I
10.1209/epl/i2001-00123-2
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We use a many-body, atomistic empirical pseudopotential approach to predict the multi-exciton emission spectrum of a lens-shaped InAs/GaAs self-assembled quantum dot. We discuss the effects of i) the direct Coulomb energies, including the differences of electron and hole wave functions; ii) the exchange Coulomb energies and iii) correlation energies given by a configuration interaction calculation. Emission from the ground state of the N exciton system to the N - 1 exciton system involving e(0) --> h(0) and e(1) --> h(1) recombinations are discussed. A comparison with a simpler single-band, effective mass approach is presented.
引用
收藏
页码:59 / 65
页数:7
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