Optical investigations of individual InAs quantum dots: Level splittings of exciton complexes

被引：62

作者：

Landin, L ^{[1
]}

Pistol, ME ^{[1
]}

Pryor, C ^{[1
]}

Persson, M ^{[1
]}

Samuelson, L ^{[1
]}

Miller, M ^{[1
]}

机构：

[1] Univ Lund, Dept Solid State Phys, S-22100 Lund, Sweden

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.60.16640

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated individual InAs quantum dots embedded in GaAs using photoluminescence spectroscopy as a function of temperature and excitation power density. We also present k.p calculations including both direct and exchange interactions for systems with up to three excitons in the dot. From these calculations we are able to assign some of the many peaks observed to various few-particle states. A rate-equation model has also been developed which allows simulations of the peak intensities with excitation power density to be made and compared with experiment. [S0163-1829(99)04548-8].

引用

页码：16640 / 16646

页数：7

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