Temperature dependence of excitonic emission in cubic CdSe thin film

被引：25

作者：

Chia, C. H. ^{[1
]}

Yuan, C. T.

Ku, J. T.

Yang, S. L.

Chou, W. C.

Juang, J. Y.

Hsieh, S. Y.

Chiu, K. C.

Hsu, J. S.

Jeng, S. Y.

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[2] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan

[3] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

来源：

JOURNAL OF LUMINESCENCE | 2008年 / 128卷 / 01期

关键词：

photoluminescence; cadmium selenide; temperature dependence; thin film; exciton-phonon interaction; Exciton binding energy;

D O I：

10.1016/j.jlumin.2007.06.003

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic Use film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton-phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16 +/- 1.5 meV was determined from the Arrhenius analysis. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：123 / 128

页数：6

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