Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering

被引：18

作者：

Pinto, Sara R. C. ^{[1
]}

Rolo, Anabela G. ^{[1
]}

Buljan, Maja ^{[2
]}

Chahboun, Adil ^{[1
,3
]}

Bernstorff, Sigrid ^{[4
]}

Barradas, Nuno P. ^{[5
]}

Alves, Eduardo ^{[5
]}

Kashtiban, Reza J. ^{[6
]}

Bangert, Ursel ^{[6
]}

Gomes, Maria J. M. ^{[1
]}

机构：

[1] Univ Minho, Dept Phys, P-4710057 Braga, Portugal

[2] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[3] Fac Sci, LPS, Dept Phys, Fes, Morocco

[4] Sincrotrone Trieste, I-34012 Basovizza, Italy

[5] Ion Beam Lab, ITN, P-2686953 Sacavem, Portugal

[6] Univ Manchester, Sch Mat, Nanostruct Mat Res Grp, Manchester M1 7HS, Lancs, England

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

OPTICAL-PROPERTIES; SIO2; NANOCRYSTALS; DEVICES; HFO2;

D O I：

10.1186/1556-276X-6-341

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this article, we present an investigation of (Ge + SiO(2))/SiO(2) multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250 degrees C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700 degrees C.

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页数：7

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