Charge-pumping characterization of SiO2/Si interface in virgin and irradiated power VDMOSFETs

被引：48

作者：

Habas, P ^{[1
]}

Prijic, Z ^{[1
]}

Pantic, D ^{[1
]}

Stojadinovic, ND ^{[1
]}

机构：

[1] UNIV NISH, FAC ELECT ENGN, YU-18000 NISH, YUGOSLAVIA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 12期

关键词：

D O I：

10.1109/16.544392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The applicability of charge-pumping technique to characterize the oxide/silicon interface in standard power Vertical Double-diffused (VD)MOS transistors is studied. Qualitative analysis of the charge-pumping threshold and flat-band voltage distributions in the VDMOS structure, supported with rigorous transient numerical modeling of the charge-pumping; effect, shows that the measurements can be carried out in the subthreshold region, This conclusion is confirmed by various experimental results, The characteristics, i.e. charge-pumping current versus gate top level, is studied in detail, The changes in the characteristics after gamma-ray irradiation are analyzed, A charge-pumping-based method for separate extraction of interface state density and density of charge trapped in the oxide after irradiation of VDMOSFET's is proposed, The validity and limitations of the method are studied by experiments and modeling.

引用

页码：2197 / 2209

页数：13

共 45 条

[11] CHARGE-PUMPING CHARACTERISTICS OF VIRGIN AND STRESSED LIGHTLY-DOPED DRAIN MOSFETS [J].