Nano-structured nitrogenated carbon films - morphology and field emission

被引:8
作者
Kurt, R [1 ]
Bonard, JM [1 ]
Karimi, A [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Dept Phys, CH-1015 Lausanne, Switzerland
关键词
chemical vapour deposition; nitrogenated carbon; nano-structures; field emission;
D O I
10.1016/S0925-9635(01)00388-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Crystalline nitrogenated carbon (C:N) films have been successfully synthesised by plasma-enhanced hot filament chemical vapour deposition (PE-HF-CVD). Nitrogen gas (N-2) and ammonia (NH3) were used as sources of atomic nitrogen whereas methane (CH4) acted as a carbon precursor. Structure analysis reveals the growth of a new type of ON film characterised by various polymorphs including worm- and foil-like microstructures at the nanometer scale. The effects of bias voltage and filament temperature on the film morphology are investigated in detail. Using pure Si as a substrate results in growth of homogeneous nanostructured films, whereas arrays of nanotubes were deposited on Ni-coated substrates. Field emission in vacuum was observed on C:N films deposited on pure Si above applied fields of 15 V/mum. The onset field could be decreased below 4 V/mum with Ni-coated substrates due to the presence of well-separated nano-tubular structures. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1962 / 1967
页数:6
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