Field emission from filtered arc deposited amorphous diamond

被引：3

作者：

Zhao, JP

Chen, ZY

Wang, X

Yang, SQ

Shi, TS

Liu, XH

Jang, J

Park, KC

机构：

[1] Kyushu Univ, Fac Engn 36, Dept Mat Sci & Engn, Fukuoka 812, Japan

[2] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China

[3] Kyunghee Univ, Dept Phys, Seoul 130701, South Korea

来源：

MATERIALS LETTERS | 1998年 / 35卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

field emission; amorphous diamond; filtered arc deposition; planar diode structure;

D O I：

10.1016/S0167-577X(97)00242-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, amorphous diamond (a-D) films have been prepared by filtered are deposition (FAD). Field emission data from the a-D film were obtained using planar diode structure. Emission currents in the range of 20-40 mu A were detected at an electric field of 20 V mu m(-l). A mechanism for electron emission from the a-D film is discussed. FAD a-D films had a low effective work function (1.0 eV) and negative electron affinity (- 0.2 eV). In addition, uniform and stable emission can be achieved for FAD a-D films. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：157 / 160

页数：4

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