Indium segregation effects in (111)B-grown (In,Ga)As/GaAs piezoelectric quantum wells

被引：16

作者：

Ballet, P

Disseix, P

Leymarie, J

Vasson, A

Vasson, AM

Grey, R

机构：

[1] Univ Clermont Ferrand 2, UMR 6602 CNRS, Lab Sci & Mat Elect & Automat, F-63177 Clermont Ferrand, France

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.59.R5308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of indium surface segregation on electronic states and excitonic properties is investigated experimentally and theoretically in (111)B-grown (In,Ga)As/GaAs strained piezoelectric quantum wells. Thermally detected optical absorption and electroreflectance experiments are performed on two samples grown by molecular beam; epitaxy and containing 7 and 14 wells, Excitonic energies and oscillator strengths are calculated by a variational method within the effective mass approximation. The influence of indium segregation on the piezoelectric field strength and the oscillator strength of excitonic transitions is analyzed.

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收藏

页码：R5308 / R5311

页数：4

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