Masked ion beam lithography with highly charged ions

Masked ion beam lithography using highly charged ions is demonstrated for the first time by producing an array of hundreds of ordered micrometer wide dots using Xe44+ on poly(methylmethacrylate) resist. At low dose, exposure of the resist is incomplete and isolated single-ion impact sites can be seen within the exposed areas. Atomic force microscope images of the single-ion impact sites show Craters with a width of 24 nm. At high dose, the exposure is complete and the dot morphology is consistent with limitations from the mask. Scanning electron microscope images indicate that the sidewall slope is steeper than four. (C) 1998 American Vacuum Society. [S0734-211X(98)13006-8].