Desorption of Ga and As atoms from GaAs surface induced by slow multiply charged Ar ions

A reaction on a semiconductor surface induced by the potential energy of slow multiply charged ions (MCIs) has been investigated. By using an Eimzel-type ion decelerator, beams of slow MCIs (Ar-q+; q less than or equal to 10) with an ion current of several tens of nanoamperes and with the kinetic energy (E(k)) of 30 X9 eV were produced. Irradiating a GaAs surface with the slow Ar-q+ induced the desorption of Ga and As atoms, and this desorption was almost independent of the E(k) but strongly dependent on the E(k); that is, on the potential energy (E(p)) of the Ar-q+. Th, effect of E(p) on atom desorption was analyzed quantitatively in terms of a model based on the Coulomb repulsion between holes generated on the surface through neutralization of the MCIs.