SURFACE-REACTION INDUCED BY MULTIPLY-CHARGED IONS

被引：9

作者：

MOCHIJI, K ^{[1
]}

ITABASHI, N ^{[1
]}

YAMAMOTO, S ^{[1
]}

OCHIAI, I ^{[1
]}

OKUNO, K ^{[1
]}

机构：

[1] TOKYO METROPOLITAN UNIV,DEPT PHYS,HACHIOJI,TOKYO 19203,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期

关键词：

SURFACE REACTION; MULTIPLY-CHARGED ION; ELECTRONIC POTENTIAL ENERGY; ION DESORPTION;

D O I：

10.1143/JJAP.33.7108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface reactions induced by an electronic potential energy of multiply-charged ions are investigated. A small electron-beam impact type ion source for production of multiply-charged ions was manufactured for this study. The charge state distribution of multiply-charged ions produced in the ion source greatly depends on the sample gas pressure and the potential barrier for ion trapping. In operation with an electron current of 7 mA at 2 keV, the ion-beam currents obtained for Ar5+ and Ar10+ are respectively at least 7 pA and 2 x 10(-3) pA. H+ ion desorption from a lightly etched GaAs surface are observed by bombarding with Ar-q+ ions (q=1-3). The desorption yield of H+ per Ar-q+ increases proportionally with the sixth power of the charge state of Ar-q+. This charge state effect is discussed from the viewpoint of the electronic interaction between the GaAs surface and Ar-q+ ions.

引用

页码：7108 / 7111

页数：4

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