CLEANING OF SI AND GAAS CRYSTAL-SURFACES BY ION-BOMBARDMENT IN THE 50-1500 EV RANGE - INFLUENCE OF BOMBARDING ENERGY AND SAMPLE TEMPERATURE ON DAMAGE AND INCORPORATION

被引：43

作者：

RABINZOHN, P ^{[1
]}

GAUTHERIN, G ^{[1
]}

AGIUS, B ^{[1
]}

COHEN, C ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 04期

关键词：

D O I：

10.1149/1.2115726

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：905 / 914

页数：10

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