Spatially resolved photocurrent mapping of operating organic photovoltaic devices using atomic force photovoltaic microscopy

被引：24

作者：

Leever, B. J. ^{[1
]}

Durstock, M. F. ^{[1
]}

Irwin, M. D. ^{[2
]}

Hains, A. W. ^{[2
]}

Marks, T. J. ^{[2
]}

Pingree, L. S. C. ^{[2
]}

Hersam, M. C. ^{[2
]}

机构：

[1] Mat & Manufacturing Directorate, Air Force Res Lab, Wright Patterson AFB, OH 45433 USA

[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

关键词：

D O I：

10.1063/1.2830695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A conductive atomic force microscopy (cAFM) technique, atomic force photovoltaic microscopy (AFPM), has been developed to characterize spatially localized inhomogeneities in organic photovoltaic (OPV) devices. In AFPM, a biased cAFM probe is raster scanned over an array of illuminated solar cells, simultaneously generating topographic and photocurrent maps. As proof of principle, AFPM is used to characterize 7.5x7.5 mu m(2) poly(3-hexylthiophene):[6,6]-phenyl-C-61-butyric acid methyl ester OPVs, revealing substantial device to device and temporal variations in the short-circuit current. The flexibility of AFPM suggests applicability to nanoscale characterization of a wide range of optoelectronically active materials and devices. (c) 2008 American Institute of Physics.

引用

页数：3

共 29 条

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