Electroluminescence from a single-nanocrystal transistor

被引:47
作者
Gudiksen, MS
Maher, KN
Ouyang, L
Park, H [1 ]
机构
[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
关键词
D O I
10.1021/nl0516005
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the fabrication and characterization of light-emitting transistors incorporating individual cadmium selenide (CdSe) nanocrystals. Electrical measurements conducted at low bias voltage and low temperature show clear evidence of Coulomb blockade behavior, indicating that electrons pass through the nanocrystal by single-electron tunneling. Once the bias voltage exceeds the band gap of CdSe, devices with asymmetric tunnel barriers emit linearly polarized light. Combined analyses of the electrical and optical data indicate that the tunnel couplings between the nanorod and the metallic electrodes change significantly as a function of bias voltage and light emission results from the inelastic scattering of tunneling electrons.
引用
收藏
页码:2257 / 2261
页数:5
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