Environment of Erbium in a-Si:H and a-SiOx:H

被引：49

作者：

Piamonteze, C

Iniguez, AC

Tessler, LR

Alves, MCM

Tolentino, H

机构：

[1] UNICAMP, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil

[2] Lab Nacl Luz Sincrotron, BR-13083970 Campinas, SP, Brazil

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.81.4652

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The chemical environment of Er in a-Si:H and a-SiOx:H was determined by extended x-ray absorption fine structure. Only one family of Er sites is found, coordinated on average with two to three O atoms (compared to six in Er2O3). We devised a new model for the incorporation of Er in a-Si:II and a-SiOx:H. According to the model, Er is incorporated in the form of [ErOdelta](+3-2 delta) complexes, with delta less than or equal to 3. The minimum configuration energy is achieved for delta = 3 when the valence requirements of Er are fulfilled. The complexes are low symmetry environments that allow the Er3+ luminescent transition at 1.54 mu m and make Er an acceptor in a-Si:H whereas it is donor in crystalline silicon. [S0031-9007(98)07668-6].

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页码：4652 / 4655

页数：4

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