Preparation of epitaxial BaTiO3 thin films by the dipping-pyrolysis process

被引：12

作者：

Kim, S ^{[1
]}

Manabe, T ^{[1
]}

Yamaguchi, I ^{[1
]}

Kumagai, T ^{[1
]}

Mizuta, S ^{[1
]}

机构：

[1] NATL INST MAT & CHEM RES,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF MATERIALS RESEARCH | 1997年 / 12卷 / 04期

关键词：

D O I：

10.1557/JMR.1997.0157

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial BaTiO3 thin films were prepared on SrTiO3 (100) substrates by the dipping-pyrolysis process using metal naphthenates as starting materials. Highly oriented BaTiO3 thin films were crystallized by heat treatment at 800 degrees C and higher, from amorphous precursor films pyrolyzed at 470 degrees C. XRD pole-figure and reciprocal-space mapping analyses showed that the films were epitaxially grown on SrTiO3 substrates and we:ce pseudocubic phase with an a(parallel to)/a(perpendicular to) ratio of 1.00(3), smaller than the c(0)/a(0) ratio (=1.011) of bulk tetragonal BaTiO3.

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页码：1141 / 1144

页数：4

相关论文

共 20 条

[1]

BENOMAR WO, 1994, J MATER RES, V9, P970

[2] BAXSR1-XTIO3 THIN-FILMS BY A CHEMICAL PROCESS [J].

BURHANUDDIN, ZA ;

TOMAR, MS ;

DAYALAN, E .

THIN SOLID FILMS, 1994, 253 (1-2) :53-56

[3] Preparation and characterization of PbTiO3, thin films by metalorganic chemical vapor deposition on a La0.5Sr0.5CoO3 metallic oxide electrode [J].

Chen, YF ;

Sun, L ;

Yu, T ;

Chen, JX ;

Zhu, YY ;

Ming, NB ;

Chen, XY ;

Liu, ZG .

THIN SOLID FILMS, 1995, 269 (1-2) :18-20

[4] HETEROEPITAXIAL GROWTH OF C-AXIS-ORIENTED BATIO3 THIN-FILMS WITH AN ATOMICALLY SMOOTH SURFACE [J].

GONG, JP ;

KAWASAKI, M ;

FUJITO, K ;

TANAKA, U ;

ISHIZAWA, N ;

YOSHIMOTO, M ;

KOINUMA, H ;

KUMAGAI, M ;

HIRAI, K ;

HORIGUCHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (5A) :L687-L689

[5] DEPOSITION OF EXTREMELY THIN (BA,SR)TIO3 THIN-FILMS FOR ULTRA-LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION [J].

HWANG, CS ;

PARK, SO ;

CHO, HJ ;

KANG, CS ;

KANG, HK ;

LEE, SI ;

LEE, MY .

APPLIED PHYSICS LETTERS, 1995, 67 (19) :2819-2821

[6] EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS AT 600-DEGREES-C BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

KAISER, DL ;

VAUDIN, MD ;

ROTTER, LD ;

WANG, ZL ;

CLINE, JP ;

HWANG, CS ;

MARINENKO, RB ;

GILLEN, JG .

APPLIED PHYSICS LETTERS, 1995, 66 (21) :2801-2803

[7] STRUCTURAL CHARACTERIZATION OF EPITAXIAL BATIO3 THIN-FILMS GROWN BY SPUTTER-DEPOSITION ON MGO(100) [J].

KIM, S ;

HISHITA, S ;

KANG, YM ;

BAIK, S .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) :5604-5608

[8]

KIM S, IN PRESS P 1996 MRS

[9] STRUCTURAL AND ELECTRICAL-PROPERTIES OF BATIO3 GROWN ON P-INP (100) BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE [J].

KIM, TW ;

YOM, SS .

APPLIED PHYSICS LETTERS, 1994, 65 (15) :1955-1957

[10] Preparation and crystallographic characterizations of highly oriented Pb(Zr0.52Ti0.48)O-3 films and MgO buffer layers on (100)GaAs and (100)Si by pulsed laser ablation [J].

Masuda, A ;

Yamanaka, Y ;

Tazoe, M ;

Nakamura, T ;

Morimoto, A ;

Shimizu, T .

JOURNAL OF CRYSTAL GROWTH, 1996, 158 (1-2) :84-88