Ultra-violet nitride LED fabrication for high-flux white LED

被引：16

作者：

Venugopalan, HS ^{[1
]}

DiCarlo, A ^{[1
]}

Gao, X ^{[1
]}

Libon, S ^{[1
]}

Shelton, BS ^{[1
]}

Stefanov, E ^{[1
]}

Zhang, T ^{[1
]}

Eliashevich, I ^{[1
]}

Weaver, SE ^{[1
]}

Hsing, M ^{[1
]}

Kolodin, B ^{[1
]}

Soules, T ^{[1
]}

Florescu, D ^{[1
]}

Guo, S ^{[1
]}

Pophristic, M ^{[1
]}

Peres, B ^{[1
]}

机构：

[1] GELcore LLC, Somerset, NJ USA

来源：

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VII | 2003年 / 4996卷

关键词：

UV LED; flip chip; reflecting contact; MOCVD growth; nitride;

D O I：

10.1117/12.486359

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The requirements for maximizing the external quantum efficiency of UV nitride LEDs are discussed. It is shown that as the chip wavelength progressively decreases, nitride epi growth on a sapphire substrate becomes advantageous in terms of light extraction. The epilayer requirements for UV LEDs dictate the growth of n-AlGaN, with increasing AL contents, and the growth of UV-transparent p-GaN. It is shown that MOCVD growth in a Emcore D-180 or Ganzilla reactor is ideal for meeting the stringent epilayer requirements. Increasing light extraction efficiency and wall-plug efficiency also requires optimization of the reflecting P-contact. The relative merits of Al- and Ag-based reflecting contacts are discussed. Performance data for UV LEDs on sapphire, for drive currents up to 700 mA is shown. Finally, a practical high power UV-based white lamp is demonstrated.

引用

页码：195 / 202

页数：8

共 6 条

[1]

Mayer J W, 1990, ELECT MAT SCI INTEGR

[2] InxGa1-xN/AlyGa1-yN violet light emitting diodes with reflective p-contacts for high single sided light extraction [J].

Mensz, PM ;

Kellawon, P ;

van Roijen, R ;

Kozodoy, P ;

Denbaars, S .

ELECTRONICS LETTERS, 1997, 33 (24) :2066-2068

[3]

Ohring M., 1998, Reliability and Failure of Electronic Material and Devices

[4] Illumination with solid state lighting technology [J].

Steigerwald, DA ;

Bhat, JC ;

Collins, D ;

Fletcher, RM ;

Holcomb, MO ;

Ludowise, MJ ;

Martin, PS ;

Rudaz, SL .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :310-320

[5]

Tu K.-N., 1992, ELECT THIN FILM SCI

[6] High-power AlGaInN flip-chip light-emitting diodes [J].

Wierer, JJ ;

Steigerwald, DA ;

Krames, MR ;

O'Shea, JJ ;

Ludowise, MJ ;

Christenson, G ;

Shen, YC ;

Lowery, C ;

Martin, PS ;

Subramanya, S ;

Götz, W ;

Gardner, NF ;

Kern, RS ;

Stockman, SA .

APPLIED PHYSICS LETTERS, 2001, 78 (22) :3379-3381

← 1 →