InxGa1-xN/AlyGa1-yN violet light emitting diodes with reflective p-contacts for high single sided light extraction

被引：13

作者：

Mensz, PM

Kellawon, P

van Roijen, R

Kozodoy, P

Denbaars, S

机构：

[1] Philips Res, Briarcliff Manor, NY 10510 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 24期

关键词：

gallium nitride; light emitting diodes;

D O I：

10.1049/el:19971379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaN/AlGaN light emitting diode structures (LED) grown epitaxially on sapphire substrates were on-wafer characterised electrically and optically. By replacing standard Ni/Au contacts to p-GaN with Ni/Al layers, the LED output power emission through the sapphire substrate was enhanced by a factor of 2-4, with no significant impact on the operating voltage.

引用

页码：2066 / 2068

页数：3

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