Size effect of the dielectric properties in bismuth-based layer-structured ferroelectric films

被引：11

作者：

Hamada, M ^{[1
]}

Tabata, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 9B期

关键词：

size effect; dielectric constant; ferroelectric thin films; laser ablation; Bi2VO5.5;

D O I：

10.1143/JJAP.37.5174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth-based-layer-structured ferroelectric films have been formed epitaxially on Nb-doped SrTiO3 substrates by pulsed laser deposition (PLD). These films show an atomically smooth surface with a wide terrace of 100 nm-200 nm, as observed by atomic force microscopy (AFM) which is ideal for measuring such properties. Crystal growth apparently changes from the step-Bow mode to the island-state mode according to the number of perovskite layers sandwiched by bismuth oxide layers. Additionally, the dielectric constant of the three film types, that is Bi2VO5.5 (n = 1), Bi3TiNbO9 (n = 2), and Bi4Ti3O12 (n = 3) decreases proportionally with decreasing film thickness. It is considered that the size effect plays an important role in determining dielectric properties. Bismuth-layered ferroelectric films, with their atomically Bat surfaces and accurate electrical properties, are an ideal material for applications in semiconductor devices.

引用

页码：5174 / 5177

页数：4

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