Influence of the gas phase on doping in diamond chemical vapor deposition

被引：20

作者：

Dandy, DS ^{[1
]}

机构：

[1] Colorado State Univ, Dept Chem Engn, Ft Collins, CO 80523 USA

来源：

THIN SOLID FILMS | 2001年 / 381卷 / 01期

关键词：

diamond; deposition process; semiconductors; chemical vapor deposition; chemisorption;

D O I：

10.1016/S0040-6090(00)01355-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A series of calculations has been carried out to examine the relationship between gas phase composition and film composition in diamond chemical vapor deposition. It is predicted that the ability to carry out in situ doping of films with N and S, and the inability to dope with O, can be explained from a simple thermodynamic perspective. Probable precursor dopant species are identified as . CN and . SH for the CH4/H-2/N-2 and CH4/H-2/H2S systems, although it is expected that these are the most likely precursors regardless of the initial forms of nitrogen and sulfur. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 5

页数：5

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