Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition

被引：18

作者：

Kimoto, T ^{[1
]}

Tamura, S ^{[1
]}

Chen, Y ^{[1
]}

Fujihira, K ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 4B期

关键词：

silicon carbide; chemical vapor deposition; surface morphology; deep level; uniformity;

D O I：

10.1143/JJAP.40.L374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

4H-SiC has been homoepitaxially grown on off-axis 4H-SiC(0001) at 1700 degreesC by chimney-type vertical hot-wall chemical vapor deposition. Mirror-like surface morphology can be obtained with high growth rates up to 21 mum/h. Epitaxial growth under C-rich conditions at growth rates of 10-14 mum/h leads to enhanced macrostep formation but reduced doping and deep trap concentrations of 7.2 x 10(14) cm(-3) and 1.3 x 10(13) cm(-3). respectively. Good thickness and doping uniformities of 4% and 6%, respectively, are achieved with this growth technique.

引用

页码：L374 / L376

页数：3

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