SURFACE-DIFFUSION LENGTHS OF ADATOMS ON 6H-SIC(0001) FACES IN CHEMICAL-VAPOR-DEPOSITION OF SIC

被引：67

作者：

KIMOTO, T

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Kyoto University

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 05期

关键词：

D O I：

10.1063/1.359999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface kinetics on 6H-SiC{0001} faces in chemical vapor deposition of SiC at 1200-1600 degrees C were studied. Based on a simple diffusion model, surface diffusion lengths were estimated from the lateral growth rates of macrosteps. No significant difference in surface diffusion lengths was observed on Si and C faces. The diffusion length decreased with the reduction of growth temperature. This decrease can be ascribed to the suppressed surface diffusion and to the enhanced incorporation of migrating species into growth nuclei, of which number significantly increased at low temperatures. The effects of gas flow rates on the surface diffusion is also discussed. (C) 1995 American Institute of Physics.

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页码：3132 / 3137

页数：6

相关论文

共 23 条

[1] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].

AKASAKI, I ;

AMANO, H ;

KOIDE, Y ;

HIRAMATSU, K ;

SAWAKI, N .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :209-219

[2] ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J].

ASAI, H .

JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :425-433

[3] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[4] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE [J].

DAVIS, RF ;

KELNER, G ;

SHUR, M ;

PALMOUR, JW ;

EDMOND, JA .

PROCEEDINGS OF THE IEEE, 1991, 79 (05) :677-701

[5]

EVERSTEYN FC, 1990, J ELECTROCHEM SOC, V117, P925

[6] REAL-TIME OBSERVATION OF MOLECULAR-BEAM EPITAXY GROWTH ON MESA-ETCHED GAAS SUBSTRATES BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

HATA, M ;

ISU, T ;

WATANABE, A ;

KATAYAMA, Y .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2542-2544

[7] MULTIATOMIC STEPS ON METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN GAAS VICINAL SURFACES STUDIED BY ATOMIC FORCE MICROSCOPY [J].

KASU, M ;

FUKUI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A) :L864-L866

[8] GROWTH-MECHANISM OF 6H-SIC IN STEP-CONTROLLED EPITAXY [J].

KIMOTO, T ;

NISHINO, H ;

YOO, WS ;

MATSUNAMI, H .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) :726-732

[9] SURFACE KINETICS OF ADATOMS IN VAPOR-PHASE EPITAXIAL-GROWTH OF SIC ON 6H-SIC(0001) VICINAL SURFACES [J].

KIMOTO, T ;

MATSUNAMI, H .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) :850-859

[10] NUCLEATION AND STEP MOTION IN CHEMICAL-VAPOR-DEPOSITION OF SIC ON 6H-SIC(0001) FACES [J].

KIMOTO, T ;

MATSUNAMI, H .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) :7322-7327