Structural, optical and electrical properties of In doped CdO thin films for optoelectronic applications

被引:101
作者
Gupta, R. K. [1 ]
Ghosh, K. [1 ]
Patel, R. [2 ]
Mishra, S. R. [3 ]
Kahol, P. K. [1 ]
机构
[1] SW Missouri State Univ, Dept Phys Astron & Mat Sci, Springfield, MO 65897 USA
[2] SW Missouri State Univ, Roy Blunt Jordan Valley Innovat Ctr, Springfield, MO 65806 USA
[3] Univ Memphis, Dept Phys, Memphis, TN 38152 USA
关键词
semiconductor; electrical properties; thin films; cadmium oxide; optical materials and properties;
D O I
10.1016/j.matlet.2008.03.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of indium doped cadmium oxide were deposited on quartz substrate using pulsed laser deposition technique. The effect of growth temperature and partial oxygen pressure on structural, optical and electrical properties was studied. We find that the optical transparency of the films largely depends on the growth temperature, while partial oxygen pressure has virtually no effect on the transparency of the films. Electrical properties are found to be sensitive to both the growth temperature and oxygen pressure. It is observed that conductivity and carrier concentration decreases with temperature. The film grown at 200 degrees C under an oxygen pressure of 5.0 x 10(-4) mbar shows high mobility (155 cm(2)/V s), high carrier concentration (1.41 x 10(21) cm(3)), and low resistivity (2.86 x 10(-5) Omega cm). (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:3373 / 3375
页数:3
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