Opto-electrical properties of Ti-doped In2O3 thin films grown by pulsed laser deposition

被引：42

作者：

Gupta, R. K. ^{[1
]}

Ghosh, K.

Mishra, S. R.

Kahol, P. K.

机构：

[1] SW Missouri State Univ, Dept Phys Astron & Mat Sci, Springfield, MO 65897 USA

[2] Univ Memphis, Dept Phys, Memphis, TN 38152 USA

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 24期

关键词：

semiconductor; electrical properties; thin films; indium oxide; titanium; optical materials and properties;

D O I：

10.1016/j.apsusc.2007.06.004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By ablating titanium containing In2O3 target with a KrF excimer laser, highly conducting and transparent films on quartz were obtained to investigate the effects of growth temperature and oxygen pressure on the structural, optical and electrical properties of these films. We find that the transparency of the films depends more on the growth temperature and less on the oxygen pressure. Electrical properties, however, are found to be sensitive to both the growth temperature and oxygen pressure. We report in this paper that a growth temperature of 500 degrees C and an oxygen pressure of 7.5 x 10(-7) bar lead to titanium-doped indium oxide films which have high mobility (up to 199 cm(2) V-1 s(-1)), low resistivity (9.8 x 10(-5) Omega cm), and relatively high transmittance (similar to 88%). (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：9422 / 9425

页数：4

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