Structural, optical and electrical properties of chemically sprayed CdO thin films

被引:137
作者
Bhosale, CH [1 ]
Kambale, AV [1 ]
Kokate, AV [1 ]
Rajpure, KY [1 ]
机构
[1] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 122卷 / 01期
关键词
spray pyrolysis; thin films; CdO; XRD; optical absorption; electrical resistivity; Hall coefficient and mobility;
D O I
10.1016/j.mseb.2005.04.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The cadmium oxide (CdO) thin films have been deposited onto amorphous and fluorine doped tin oxide (FrO) glass substrates using spray pyrolysis technique. The aqueous solution containing precursor of Cd has been used to obtain good quality deposits at optimized preparative parameters. The films have been characterized by techniques such as X-ray diffraction (XRD), optical absorption, electrical resistivity and thermoelectric power (TEP) measurements. The XRD study reveals that the films are polycrystalline with cubic structure. Optical absorption studies reveal that the value of absorption coefficient is in the order of 10(4) cm(-1), indicating direct band to band transition with band gap energy 2.26 eV, close to its value of intrinsic band gap energy. The electrical characterization shows that the electrical resistivity (p) is of the order 10(-3) Omega cm and it decreases with increase in temperature indicate the samples are semiconducting in nature. The value of activation energy is found to be 0.077 eV TEP measurement shows the thermoelectric voltage for CdO films is positive towards the hot end, indicating n-type behavior of sample. The value of TEP increases with increase in temperature. The Hall effect measurement study reveals that the carrier concentration (n), Hall coefficients (R-H) and carrier mobility (mu(H)) are of the order of 10(23) cm(-3) 10(-8) cm(3)/C and 10(-4) cm(-2)/Vs, respectively. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:67 / 71
页数:5
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