Investigation of carrier dynamics in Zn1-xMgxO by time-resolved photoluminescence

被引：17

作者：

Chernikov, A. ^{[1
,2
]}

Horst, S. ^{[1
,2
]}

Koch, M. ^{[1
,2
]}

Volz, K. ^{[1
,2
]}

Chatterjee, S. ^{[1
,2
]}

Koch, S. W. ^{[1
,2
]}

Wassner, T. A. ^{[3
]}

Laumer, B. ^{[3
]}

Eickhoff, M. ^{[4
]}

机构：

[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[4] Univ Giessen, Inst Phys, D-35392 Giessen, Germany

来源：

JOURNAL OF LUMINESCENCE | 2010年 / 130卷 / 11期

关键词：

ZnMgO; Time resolved photoluminescence; Carrier dynamics; Disorder; QUANTUM-WELLS; EXCITON;

D O I：

10.1016/j.jlumin.2010.06.030

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The influence of the Mg concentration and lattice temperature on the carrier recombination dynamics in Zn1-xMgxO alloys has been studied by time-resolved photoluminescence for different emission and excitation energies. Carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations. Emission energy dependent dynamics were analyzed by the application of the theoretical model, yielding a characteristic localization energy of 60 +/- 15 meV for the sample with the highest Mg concentration of x=0.21. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：2256 / 2259

页数：4

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