Clustering effects in Ga(AsBi)

被引：121

作者：

Imhof, Sebastian ^{[1
]}

Thraenhardt, Angela ^{[1
]}

Chernikov, Alexej ^{[2
]}

Koch, Martin ^{[2
]}

Koester, Niko S. ^{[2
]}

Kolata, Kolja ^{[2
]}

Chatterjee, Sangam ^{[2
]}

Koch, Stephan W. ^{[2
]}

Lu, Xianfeng ^{[3
]}

Johnson, Shane R. ^{[3
]}

Beaton, Dan A. ^{[4
]}

Tiedje, Thomas ^{[5
]}

Rubel, Oleg ^{[6
,7
]}

机构：

[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

[2] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

[3] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[4] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z4, Canada

[5] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 3P6, Canada

[6] Thunder Bay Reg Res Inst, Thunder Bay, ON P7A 7T1, Canada

[7] Lakehead Univ, Dept Phys, Thunder Bay, ON P7B 5E1, Canada

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

基金：

美国国家科学基金会;

关键词：

gallium arsenide; III-V semiconductors; Monte Carlo methods; photoluminescence; GAP;

D O I：

10.1063/1.3374884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence from a Ga(AsBi) sample is investigated as a function of pump power and lattice temperature. The disorder-related features are analyzed using a Monte Carlo simulation technique. A two-scale approach is introduced to separately account for cluster localization and alloy disorder effects. The corresponding characteristic energy scales of 11 and 45 meV are deduced from the detailed comparison between experiment and simulation.

引用

页数：3

共 21 条

[1] Valence-band anticrossing in mismatched III-V semiconductor alloys [J].

Alberi, K. ;

Wu, J. ;

Walukiewicz, W. ;

Yu, K. M. ;

Dubon, O. D. ;

Watkins, S. P. ;

Wang, C. X. ;

Liu, X. ;

Cho, Y. -J. ;

Furdyna, J. .

PHYSICAL REVIEW B, 2007, 75 (04)

[2]

BARANOVSKII SD, 1984, SOV PHYS SEMICOND+, V18, P828

[3] Temperature-dependent exciton luminescence in quantum wells by computer simulation [J].

Baranovskii, SD ;

Eichmann, R ;

Thomas, P .

PHYSICAL REVIEW B, 1998, 58 (19) :13081-13087

[4] Giant spin-orbit bowing in GaAs1-xBix [J].

Fluegel, B. ;

Francoeur, S. ;

Mascarenhas, A. ;

Tixier, S. ;

Young, E. C. ;

Tiedje, T. .

PHYSICAL REVIEW LETTERS, 2006, 97 (06)

[5] Band gap of GaAs1-xBix, 0<x<3.6% [J].

Francoeur, S ;

Seong, MJ ;

Mascarenhas, A ;

Tixier, S ;

Adamcyk, M ;

Tiedje, T .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3874-3876

[6] Bi isoelectronic impurities in GaAs [J].

Francoeur, S. ;

Tixier, S. ;

Young, E. ;

Tiedje, T. ;

Mascarenhas, A. .

PHYSICAL REVIEW B, 2008, 77 (08)

[7] Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells [J].

Grüning, H ;

Kohary, K ;

Baranovskii, SD ;

Rubel, O ;

Klar, PJ ;

Ramakrishnan, A ;

Ebbinghaus, G ;

Thomas, P ;

Heimbrodt, W ;

Stolz, W ;

Rühle, WW .

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 1, NO 1, 2004, 1 (01) :109-112

[8] Molecular-beam epitaxy and characteristics of GaNyAs1-x-yBix -: art. no. 053505 [J].

Huang, W ;

Oe, K ;

Feng, G ;

Yoshimoto, M .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)

[9] Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells [J].

Imhof, S. ;

Bueckers, C. ;

Thraenhardt, A. ;

Hader, J. ;

Moloney, J. V. ;

Koch, S. W. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (12)

[10] Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs [J].

Janotti, A ;

Wei, SH ;

Zhang, SB .

PHYSICAL REVIEW B, 2002, 65 (11) :1-5

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