Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

被引：27

作者：

Imhof, S. ^{[1
,2
]}

Bueckers, C. ^{[1
,2
]}

Thraenhardt, A. ^{[1
,2
]}

Hader, J. ^{[3
]}

Moloney, J. V. ^{[3
]}

Koch, S. W. ^{[1
,2
]}

机构：

[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 12期

关键词：

D O I：

10.1088/0268-1242/23/12/125009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

引用

页数：6

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