Impact of oxygen vacancies on high-κ gate stack engineering

被引：49

作者：

Takeuchi, H ^{[1
]}

Wong, HY ^{[1
]}

Ha, DW ^{[1
]}

King, TJ ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of oxygen vacancies in Hf-based gate dielectrics is discussed. Generation of oxygen vacancies in HfO2 is thermodynamically driven and causes Si interfacial layer formation and gate Fermi-level pinning in MOS devices. Hence, it is necessary to prevent oxygen transport across both top and bottom gate-dielectric interfaces through careful design of material system and thermal processing steps.

引用

页码：829 / 832

页数：4

共 23 条

[1]

[Anonymous], 2003, CRC HDB PHYS CHEM

[2]

Chui CO, 2002, IEEE ELECTR DEVICE L, V23, P473, DOI [10.1109/LED.2002.801319, 10.1009/LED.2002.801319]

[3] Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics [J].

Gilmer, DC ;

Hegde, R ;

Cotton, R ;

Garcia, R ;

Dhandapani, V ;

Triyoso, D ;

Roan, D ;

Franke, A ;

Rai, R ;

Prabhu, L ;

Hobbs, C ;

Grant, JM ;

La, L ;

Samavedam, S ;

Taylor, B ;

Tseng, H ;

Tobin, P .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1288-1290

[4] Specific structural factors influencing on reliability of CVD-HfO2 [J].

Harada, Y ;

Niwa, M ;

Lee, SJ ;

Kwong, DL .

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, :26-27

[5] Fermi-level pinning at the polysilicon/metal oxide interface - Part I [J].

Hobbs, CC ;

Fonseca, LRC ;

Knizhnik, A ;

Dhandapani, V ;

Samavedam, SB ;

Taylor, WJ ;

Grant, JM ;

Dip, LG ;

Triyoso, DH ;

Hegde, RI ;

Gilmer, DC ;

Garcia, R ;

Roan, D ;

Lovejoy, ML ;

Rai, RS ;

Hebert, EA ;

Tseng, HH ;

Anderson, SGH ;

White, BE ;

Tobin, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :971-977

[6] Thermodynamic stability of binary oxides in contact with silicon [J].

Hubbard, KJ ;

Schlom, DG .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776

[7] MOSFET devices with polysilicon on single-layer HfO2 high-k dielectrics [J].

Kang, LG ;

Onishi, K ;

Jeon, YJ ;

Lee, BH ;

Kang, CS ;

Qi, WJ ;

Nieh, R ;

Gopalan, S ;

Choi, R ;

Lee, JC .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :35-38

[8] Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics [J].

Kerber, A ;

Cartier, E ;

Pantisano, L ;

Degraeve, R ;

Kauerauf, T ;

Kim, Y ;

Hou, A ;

Groeseneken, G ;

Maes, HE ;

Schwalke, U .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (02) :87-89

[9] Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition [J].

Kim, H ;

McIntyre, PC ;

Saraswat, KC .

APPLIED PHYSICS LETTERS, 2003, 82 (01) :106-108

[10] High quality ultra thin CVD HfO2 gate stack with poly-Si gate electrode [J].

Lee, SJ ;

Luan, HF ;

Bai, WP ;

Lee, CH ;

Jeon, TS ;

Senzaki, Y ;

Roberts, D ;

Kwong, DL .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :31-34

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