Bipolar Conduction in SnO Thin Films

被引：147

作者：

Hosono, Hideo ^{[1
]}

Ogo, Yoichi

Yanagi, Hiroshi

Kamiya, Toshio

机构：

[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 01期

基金：

日本学术振兴会;

关键词：

TRANSPARENT OXIDE SEMICONDUCTORS; FABRICATION; CUINO2;

D O I：

10.1149/1.3505288

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Tin monoxide, SnO, is known as a p-type semiconductor. Comparison of the energy levels with the band alignment of oxide semiconductors implies that SnO is bipolar, and carrier polarity conversion to n-type was achieved by Sb doping. The electron mobility and the donor level are similar to 2 cm(2) (V s)(-1) and similar to 90 meV, which are similar to the hole mobility and the acceptor level in p-type SnO. n-Type conduction was further confirmed by the rectification characteristics of a homo p/n junction. A concept for realizing bipolar oxide semiconductors with high visible transparency is proposed. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3505288] All rights reserved.

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页码：II13 / II16

页数：4

相关论文

共 23 条

[1] Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing [J].

Fortunato, Elvira ;

Barros, Raquel ;

Barquinha, Pedro ;

Figueiredo, Vitor ;

Park, Sang-Hee Ko ;

Hwang, Chi-Sun ;

Martins, Rodrigo .

APPLIED PHYSICS LETTERS, 2010, 97 (05)

[2] Microstructure, optical, and electrical properties of p-type SnO thin films [J].

Guo, W. ;

Fu, L. ;

Zhang, Y. ;

Zhang, K. ;

Liang, L. Y. ;

Liu, Z. M. ;

Cao, H. T. ;

Pan, X. Q. .

APPLIED PHYSICS LETTERS, 2010, 96 (04)

[3] Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS [J].

Hiramatsu, H ;

Ueda, K ;

Ohta, H ;

Orita, M ;

Hirano, M ;

Hosono, H .

APPLIED PHYSICS LETTERS, 2002, 81 (04) :598-600

[4] Recent progress in transparent oxide semiconductors: Materials and device application [J].

Hosono, Hideo .

THIN SOLID FILMS, 2007, 515 (15) :6000-6014

[5]

Hosono H, 2010, HANDBOOK OF TRANSPARENT CONDUCTORS, P313, DOI 10.1007/978-1-4419-1638-9_10

[6] Transparent p-type conducting oxides:: Design and fabrication of p-n heterojunctions [J].

Kawazoe, H ;

Yanagi, H ;

Ueda, K ;

Hosono, H .

MRS BULLETIN, 2000, 25 (08) :28-36

[7] Effects of post-annealing on (110) Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor [J].

Matsuzaki, Kosuke ;

Nomura, Kenji ;

Yanagi, Hiroshi ;

Kamiya, Toshio ;

Hirano, Masahiro ;

Hosono, Hideo .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (09) :2192-2197

[8]

Moh G.H., 1974, CHEM ERDE-GEOCHEM, V33, P243

[9] Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors [J].

Na, H. J. ;

Lee, J. C. ;

Heh, D. ;

Sivasubramani, P. ;

Kirsch, P. D. ;

Oh, J. W. ;

Majhi, P. ;

Rivillon, S. ;

Chabal, Y. J. ;

Lee, B. H. ;

Choi, R. .

APPLIED PHYSICS LETTERS, 2008, 93 (19)

[10] A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes [J].

Narushima, S ;

Mizoguchi, H ;

Shimizu, K ;

Ueda, K ;

Ohta, H ;

Hirano, M ;

Kamiya, T ;

Hosono, H .

ADVANCED MATERIALS, 2003, 15 (17) :1409-1413