Carrier-density-dependent electron effective mass in Zn1-xMnxSe for 0≤x≤0.13 -: art. no. 181907

We used room-temperature infrared reflectivity measurements to investigate n-type chlorine-doped Zn1-xMnxSe epilayers (0 <= x <= 0.13). By making Drude-Lorentz-type multioscillator fits to our data, we extracted the optical electron effective mass (m(*)) in doped Zn(Mn)Se:Cl samples with different Mn content and doping concentrations. Our results indicate that m* in Zn1-xMnxSe is lower than that for ZnSe. In n-type chlorine-doped ZnSe samples with different doping concentrations, m* varied from 0.133 m(0) to 0.152 m(0), while in Zn0.87Mn0.13Se:C1 samples, we found a variation from 0.095 m(0) to 0.1 15 m(0) within +/- 9% experimental accuracy. From theoretical calculations, we estimate that the band-edge electron masses in ZnSe:Cl and Zn0.87Mn0.13Se:C1 should be about 0.132 m(0) and 0.093 m(0), respectively. (c) 2005 American Institute of Physics.