Investigation on base surface recombination in self passivated GaAlAs/GaInP/GaAs heterojunction bipolar transistor

被引：2

作者：

Bourguiga, R ^{[1
]}

Sik, H

Scavennec, A

机构：

[1] Fac Sci Bizerte, Zarzouna Bizerte 7021, Tunisia

[2] CNET, France Telecom, Paris Lab Bagneux B, F-92225 Bagneux, France

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 1998年 / 4卷 / 01期

关键词：

D O I：

10.1051/epjap:1998104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of the current gain with the size of the emitter-base junction of double mesa Self Passivated Heterojunction Bipolar Transistors (SP-HBT) has been investigated, the extrinsic base layer being passivated with a n-type GaInP layer. The current gain is widely improved, due to a 18-fold reduction of the surface recombination in the extrinsic base region with respect to unpassivated HBT. The surface recombination current ideality factor has been found to be 1.13.

引用

页码：27 / 29

页数：3

共 10 条

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