INNOVATIVE PASSIVATED HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CBE

被引：13

作者：

DUBONCHEVALLIER, C

ALEXANDRE, F

BENCHIMOL, JL

DANGLA, J

AMARGER, V

HELIOT, F

BOURGUIGA, R

机构：

[1] France Telecom, CNET, PAB, Laboratoire de Bagneux, 92225 Bagneux cedex, 196 avenue Henri Ravera

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 25期

关键词：

TRANSISTORS; SEMICONDUCTOR GROWTH; EPITAXY AND EPITAXIAL GROWTH; BIPOLAR DEVICES;

D O I：

10.1049/el:19921485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An innovative passivated heterojunction bipolar transistor structure, which enables with the same technological step both base surface passivation and emitter selective etching to be obtained, is reported. This new structure employs an emitter comprising two layers, a thin GaInP layer and a GaAlAs layer.

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页码：2308 / 2309

页数：2

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