VERY HIGH-GAIN IN CARBON-DOPED BASE HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY

被引：25

作者：

BENCHIMOL, JL

ALEXANDRE, F

DUBONCHEVALLIER, C

HELIOT, F

BOURGUIGA, R

DANGLA, J

SERMAGE, B

机构：

[1] Frances-Telecom, Centre National d’Etude des Telecommunications, Laboratoire de Bagneux, F92220 Bagneux

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 14期

关键词：

BIPOLAR DEVICES; TRANSISTORS; EPITAXY AND EPITAXIAL GROWTH; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current gains close to 200 are reported in carbon-doped base heterojunction bipolar transistors grown by chemical beam epitaxy, for base sheet resistance of 460 OMEGA/square. This result was made possible by the excellent quality of the carbon-doped GaAs layers, as demonstrated by the hole mobility and the minority carrier lifetime measurements.

引用

页码：1344 / 1345

页数：2

共 15 条

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