ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HEAVILY C-DOPED BASE LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY

被引：27

作者：

MAKIMOTO, T ^{[1
]}

KOBAYASHI, N ^{[1
]}

ITO, H ^{[1
]}

ISHIBASHI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

关键词：

D O I：

10.1063/1.100827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：39 / 41

页数：3

共 11 条

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[6] ITO H, 1984, 16TH INT C SOL STAT, P351
[7] ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1435 - 1437
[8] EFFICIENT SI PLANAR DOPING IN GAAS BY FLOW-RATE MODULATION EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09): : L746 - L748
[9] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS
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[10] MODULATION DOPED N-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY
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KOBAYASHI, N
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L513 - L515