HIGH-SPEED NON-SELFALIGNED GALNP GAAS-TEBT

被引：18

作者：

ZWICKNAGL, P ^{[1
]}

SCHAPER, U ^{[1
]}

SCHLEICHER, L ^{[1
]}

SIWERIS, H ^{[1
]}

BACHEM, KH ^{[1
]}

LAUTERBACH, T ^{[1
]}

PLETSCHEN, W ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 03期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tunnelling emitter bipolar transistors (TEBTs) with a 10 nm GaInP layer between emitter and base acting as a hole repelling potential barrier in the valence band have been fabricated from MOCVD grown Ga0.5In0.5P/GaAs layer structures. The carbon doped base layer (110 nm, 6.5 x 10(19) cm-3) exhibits a base sheet resistance of 100-OMEGA/square. DC and RF characterisation of a non-selfaligned GaAs asymmetric TEBT with f(T) > 40 GHz and f(max) > 90 GHz are reported.

引用

页码：327 / 328

页数：2

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