The grain size effec of the Pb(Zr0.45Ti0.55)O3 thin films deposited on LaNiO3-coated silicon by modified sol-gel process

被引：47

作者：

Hu, SH ^{[1
]}

Hu, GJ ^{[1
]}

Meng, XJ ^{[1
]}

Wang, GS ^{[1
]}

Sun, JL ^{[1
]}

Guo, SL ^{[1
]}

Chu, JH ^{[1
]}

Dai, N ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 260卷 / 1-2期

关键词：

X-ray diffraction; perovskites; ferroelectric materials;

D O I：

10.1016/S0022-0248(03)01592-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Highly (100) oriented PZT thin films with different grain sizes have been deposited on an LaNiO3-coated silicon substrate by a modified sol-gel process. The growth mechanism of films with high (100) orientation and the effects of grain size on the dielectric and ferroelectric properties of the films are qualitatively discussed. Measurements of dielectric and ferroelectric properties reveal that films of large grain sizes present large relative dielectric permittivity and large remnant polarization. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：109 / 114

页数：6

共 15 条

[1] Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films? [J].

Aggarwal, S ;

Madhukar, S ;

Nagaraj, B ;

Jenkins, IG ;

Ramesh, R ;

Boyer, L ;

Evans, JT .

APPLIED PHYSICS LETTERS, 1999, 75 (05) :716-718

[2] DIELECTRIC-PROPERTIES OF FINE-GRAINED BARIUM-TITANATE CERAMICS [J].

ARLT, G ;

HENNINGS, D ;

DEWITH, G .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1619-1625

[3] Effects of particle size on the phase transition in Pb(Zr, Ti)O3 grown by the sol-gel technique [J].

Castro-Rodriguez, R ;

Quadrelli, M ;

Vasco, E ;

Calderon, F ;

Leccabue, F ;

Watts, BE .

MATERIALS LETTERS, 1998, 34 (3-6) :326-331

[4] Application of electroceramic thin films to optical waveguide devices [J].

Fork, DK ;

ArmaniLeplingard, F ;

Kingston, JJ .

MRS BULLETIN, 1996, 21 (07) :53-58

[5] Capacitance-voltage characteristics of Bi4Ti3O12/p-Si interface [J].

Fu, LW ;

Liu, K ;

Zhang, B ;

Chu, JH ;

Wang, H ;

Wang, M .

APPLIED PHYSICS LETTERS, 1998, 72 (14) :1784-1786

[6] CURRENT-VOLTAGE CHARACTERISTICS OF ULTRAFINE-GRAINED FERROELECTRIC PB(ZR, TI)O3 THIN-FILMS [J].

HU, H ;

KRUPANIDHI, SB .

JOURNAL OF MATERIALS RESEARCH, 1994, 9 (06) :1484-1498

[7]

JONSCHER AK, 1983, DIELECTRIC RELAXATIO, P25

[8] High-permittivity perovskite thin films for dynamic random-access memories [J].

Kingon, AI ;

Streiffer, SK ;

Basceri, C ;

Summerfelt, SR .

MRS BULLETIN, 1996, 21 (07) :46-52

[9] Randomly oriented Bi4Ti3O12 thin films derived from a hybrid sol-gel process [J].

Kong, LB ;

Ma, J .

THIN SOLID FILMS, 2000, 379 (1-2) :89-93

[10] Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode [J].

Meng, XJ ;

Sun, JL ;

Yu, J ;

Wang, GS ;

Guo, SL ;

Chu, JH .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 73 (03) :323-325

← 1 2 →