Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode

被引：37

作者：

Meng, XJ ^{[1
]}

Sun, JL ^{[1
]}

Yu, J ^{[1
]}

Wang, GS ^{[1
]}

Guo, SL ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2001年 / 73卷 / 03期

关键词：

D O I：

10.1007/s003390000696

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A highly (100)-oriented metallic LaNiO3 film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate and nickel acetate as the starting sources. Subsequent Pb(Zr, Ti)O-3 (PZT) thin films deposited on the LaNiO3-coated Si substrate were obtained by a modified sol-gel method. It was found that the PZT thin films began to form a single perovskite phase at a low annealing temperature of 530 degreesC, and exhibited highly (100) orientation. A ferroelectric capacitor of Pt/Pb(Zr, Ti)O-3/LaNiO3/Si annealed at 600 degreesC displayed a good P - E hysteresis characteristic and was fatigue-free even after 10(11) switching cycles.

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页码：323 / 325

页数：3

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