Capacitance-voltage characteristics of Bi4Ti3O12/p-Si interface

Electrical properties of the interface between Bi3Ti3O12 ferroelectric film and p-Si substrate have been studied by capacitance-voltage (C-V) characteristics. It is found that the interface barrier can be broken down temporally because of the charge injection from Si substrate into the ferroelectric thin film, and this charge injection behavior induces hump and valley structures in the C-V curves. It is also found that the polarization in the Bi4Ti3O12 film is aligned along a preferential direction from semiconductor to ferroelectric thin film, which is attributed to the ferroelectric/p-Si contact. (C) 1998 American Institute of Physics. [S0003-6951(98)02014-2].