Attachment chemistry of organic molecules on Si(111)-7x7

被引:106
作者
Tao, F [1 ]
Xu, GQ [1 ]
机构
[1] Natl Univ Singapore, Dept Chem, Singapore 119260, Singapore
关键词
D O I
10.1021/ar0400488
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Molecular attachment chemistry is emerging as an important approach to tailor the chemical, physical, and mechanical properties of silicon surfaces, as well as to incorporate organic functions into silicon-based devices for various technological needs. The chemical bonding and reactivity of various organic molecules on Si(111)-7 x 7 were systematically studied using XPS, HREELS, TPD, UPS, STM, and DFT calculations. The spatial arrangements and unique electronic properties of reactive adatoms and rest atoms on the surface offer rich attachment chemistry for organic functionalities. Investigations demonstrated that organic molecules can be chemically bound to Si(Ill)-7 x 7 through several reaction pathways, including [4 + 2]- and [2 + 2]-like additions, dative bonding, and dissociative reaction. This Account reviews the recent progress and current understanding of reactivity, selectivity, and mechanisms of organic molecules on Si(111)-7 x 7.
引用
收藏
页码:882 / 893
页数:12
相关论文
共 57 条
[1]   Attaching organic layers to semiconductor surfaces [J].
Bent, SF .
JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (11) :2830-2842
[2]   Organic functionalization of group IV semiconductor surfaces: principles, examples, applications, and prospects [J].
Bent, SF .
SURFACE SCIENCE, 2002, 500 (1-3) :879-903
[3]   THE IMPORTANCE OF STRUCTURE AND BONDING IN SEMICONDUCTOR SURFACE-CHEMISTRY - HYDROGEN ON THE SI(111)-7X7 SURFACE [J].
BOLAND, JJ .
SURFACE SCIENCE, 1991, 244 (1-2) :1-14
[4]   Silicon surfaces as electron acceptors: Dative bonding of amines with Si(001) and Si(111) surfaces [J].
Cao, XP ;
Hamers, RJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2001, 123 (44) :10988-10996
[5]  
Cao Y, 2000, ANGEW CHEM INT EDIT, V39, P2740, DOI 10.1002/1521-3773(20000804)39:15<2740::AID-ANIE2740>3.0.CO
[6]  
2-J
[7]   Stereo-selective binding of chlorobenzene on Si(111)-7x7 [J].
Cao, Y ;
Deng, JF ;
Xu, GQ .
JOURNAL OF CHEMICAL PHYSICS, 2000, 112 (10) :4759-4767
[8]   Cycloaddition chemistry of thiophene on the silicon (111)-7x7 surface [J].
Cao, Y ;
Yong, KS ;
Wang, ZH ;
Deng, JF ;
Lai, YH ;
Xu, GQ .
JOURNAL OF CHEMICAL PHYSICS, 2001, 115 (07) :3287-3296
[9]   Formation of di-σ bond in benzene chemisorption on Si(111)-7x7 [J].
Cao, Y ;
Wei, XM ;
Chin, WS ;
Lai, YH ;
Deng, JF ;
Bernasek, SL ;
Xu, GQ .
JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (27) :5698-5702
[10]   Dry thienylation of the silicon (111)-(7 x 7) surface [J].
Cao, Y ;
Yong, KS ;
Wang, ZQ ;
Chin, WS ;
Lai, YH ;
Deng, JF ;
Xu, GQ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (08) :1812-1813