Study of PbSe layer oxidation and oxide dissolution

被引:45
作者
Gautier, C [1 ]
Cambon-Muller, M [1 ]
Averous, M [1 ]
机构
[1] Univ Montpellier 2, Etud Semicond Grp, UMR 5650, F-34095 Montpellier 5, France
关键词
PbSe; oxide; dissolution; KOH; XPS; AES;
D O I
10.1016/S0169-4332(98)00606-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The presence of contamination at the Pb/p-PbSe interface corresponding to a Schottky contact leads to the formation of an n-type inversion layer resulting in an ohmic behaviour. In this work, the PbSe oxidation kinetics by air exposure is studied using XPS and AES measurements. We found that an oxide layer is formed at the surface, containing PbO and SeO2 compounds. Secondly, the oxide layer dissolution in KOH-based solutions is investigated. A C- and O-decontaminated PbSe surface is obtained after a few minutes soaking in a bath containing ethylene glycol as solvent. Anger microanalysis demonstrates that the decontaminated surface is made of PbxSe with x < 1, corresponding to a lead deficit. The surface morphology does not appear to be modified, as seen by AFM, but the root mean square roughness calculation shows a weak improvement. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:157 / 163
页数:7
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