Effect of ion implantation induced defects on optical attenuation in silicon waveguides

被引：11

作者：

Knights, AP

Hopper, GE

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

[2] Bookham Technol, Abingdon OX14 4RY, Oxon, England

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 23期

关键词：

D O I：

10.1049/el:20031036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of ion implantation induced defects on optical attenuation in silicon waveguides has been investigated for MeV self-ion implantation. A lower limit of 1200 dB cm(-1) for a dose of 1 x 10(14) cm(-2) has been measured. The results can be approximated by a simple analytical expression and hence extended to a wider range of implantation species, doses and energies.

引用

页码：1648 / 1649

页数：2

共 9 条

[1] Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon [J].