Nonlinear behavior of the energy gap in Ge1-xSnx alloys at 4 K

被引：45

作者：

de Guevara, H. Perez Ladron

Rodriguez, A. G.

Navarro-Contreras, H.

Vidal, M. A.

机构：

[1] Univ Guadalajara, Ctr Univ Lagos, Jalisco 47460, Mexico

[2] Univ Autonoma San Luis Potosi, Inst Invest Comun, San Luis Potosi 78000, Mexico

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 16期

关键词：

D O I：

10.1063/1.2800296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical energy gap of Ge1-xSnx alloys (x <= 0.14) grown on Ge substrates has been determined by performing transmittance measurements at 4 K using a fast fourier transform infrared interferometer. The direct energy gap transitions in Ge1-xSnx alloys behave following a nonlinear dependence on the Sn concentration, expressed by a quadratic equation, with a so called bowing parameter b(0) that describes the deviation from a simple linear dependence. Our observations resulted in b(0)(RT)=2.30 +/- 0.10 eV and b(0)(4 K)=2.84 +/- 0.15 eV, at room temperature and 4 K, respectively. The validity of our fit is limited for Sn concentrations lower than 15%. (C) 2007 American Institute of Physics.

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