Local behavior of complex materials: scanning probes and nano structure

被引：19

作者：

Bonnell, DA ^{[1
]}

Shao, R ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 2003年 / 7卷 / 02期

基金：

美国国家科学基金会;

关键词：

scanning probe microscopy; multiple modulation; relaxation; spatial resolution; complex materials;

D O I：

10.1016/S1359-0286(03)00047-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Understanding the behavior of complex materials such as organic self-assembled monolayers, molecular and nano wires, and transition metal oxide thin films, is facilitated by probes of local properties. Recent extensions of scanning probe microscopies that extract electrical potential. capacitance. dielectric constant, electromechanical coupling coefficients and impedance, are described. In most cases, these complex properties are accessed by stimulations and/or response function detection with multiple frequency modulations. Several illustrative examples include determination of the electronic structure of individual defects in a carbon nanotube, ferroelectric domain interactions in oxide thin films, and electric potential of an alkanethiol on metal. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：161 / 171

页数：11

共 94 条

[11] NANOMETER-SCALE IMAGING OF POTENTIAL PROFILES IN OPTICALLY-EXCITED N-I-P-I HETEROSTRUCTURE USING KELVIN PROBE FORCE MICROSCOPY [J].

CHAVEZPIRSON, A ;

VATEL, O ;

TANIMOTO, M ;

ANDO, H ;

IWAMURA, H ;

KANBE, H .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3069-3071

[12] Surface potential of ferroelectric thin films investigated by scanning probe microscopy [J].

Chen, XQ ;

Yamada, H ;

Horiuchi, T ;

Matsushige, K ;

Watanabe, S ;

Kawai, M ;

Weiss, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05) :1930-1934

[13] Scanning nonlinear dielectric microscope [J].

Cho, YS ;

Kirihara, A ;

Saeki, T .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (06) :2297-2303

[14] Spatial variation of ferroelectric properties in Pb(Zr0.3, Ti0.7)O3 thin films studied by atomic force microscopy [J].

Christman, JA ;

Kim, SH ;

Maiwa, H ;

Maria, JP ;

Rodriguez, BJ ;

Kingon, AI ;

Nemanich, RJ .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :8031-8034

[15]

COHEN S, 1999, P STM 99, P554

[16] Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin film capacitors with Pt electrodes [J].

Colla, EL ;

Hong, SB ;

Taylor, DV ;

Tagantsev, AK ;

Setter, N ;

No, K .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2763-2765

[17] Noncontact scanning probe microscope potentiometry of surface charge patches: Origin and interpretation of time-dependent signals [J].

Cunningham, S ;

Larkin, IA ;

Davis, JH .

APPLIED PHYSICS LETTERS, 1998, 73 (01) :123-125

[18] Low weight spreading resistance profiling of ultrashallow dopant profiles [J].

De Wolf, P ;

Clarysse, T ;

Vandervorst, W ;

Hellemans, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01) :401-405

[19] Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy [J].

De Wolf, P ;

Stephenson, R ;

Trenkler, T ;

Clarysse, T ;

Hantschel, T ;

Vandevorst, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :361-368

[20] Controlling doping and carrier injection in carbon nanotube transistors [J].

Derycke, V ;

Martel, R ;

Appenzeller, J ;

Avouris, P .

APPLIED PHYSICS LETTERS, 2002, 80 (15) :2773-2775

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