Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy

被引：28

作者：

Smeeton, TM ^{[1
]}

Kappers, MJ ^{[1
]}

Barnard, JS ^{[1
]}

Vickers, ME ^{[1
]}

Humphreys, CJ ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 240卷 / 02期

关键词：

D O I：

10.1002/pssb.200303262

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A set of InxGa1-xN/GaN single quantum wells (SQWs) were analysed using X-ray reflectivity (XRR), high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). A method for determining the thickness and composition of the single quantum well layers using only X-ray scattering measurements is described - the results agree very closely with those determined from HRTEM analysis of the same samples. HRTEM lattice fringe images obtained from InGaN subjected to minimal exposure to the electron beam were used to determine local lattice parameter maps. These show the indium to be distributed uniformly within the alloy. The electron beam very rapidly caused damage to the InGaN which could be falsely interpreted as an inhomogeneous indium distribution. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：297 / 300

页数：4

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