Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric HfO2

被引：147

作者：

Mueller, Johannes ^{[1
]}

Boescke, Tim S. ^{[2
]}

Schroeder, Uwe ^{[2
]}

Hoffmann, Raik ^{[1
]}

Mikolajick, Thomas ^{[3
]}

Frey, Lothar ^{[4
]}

机构：

[1] Fraunhofer CNT, D-01099 Dresden, Germany

[2] Qimonda, D-01099 Dresden, Germany

[3] Tech Univ Dresden, Namlab GmbH, D-01187 Dresden, Germany

[4] IISB FAU Erlangen, D-91058 Erlangen, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 02期

关键词：

Hafnium oxide; metal-ferroelectric-insulator-semiconductor (MFIS) FET; nonvolatile memory; CAPACITORS;

D O I：

10.1109/LED.2011.2177435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si : HfO2. The program and erase operation of this metal-ferroelectric-insulator-silicon FET (MFIS) with poly-Si/TiN/Si : HfO2/SiO2/Si gate stack is compared to the transient switching behavior of a TiN-based metal-ferroelectric-metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence for ferroelectric domain switching, leading to a higher switching speed with increasing applied field. Similar observations were made for the material when implemented into an MFIS structure. Nonvolatile switching was observed down to 20-ns pulsewidth, yielding a memory window (MW) of 1.2 V. Further increase in gate bias or pulsewidth led to charge injection and degradation of the MW. Retention measurements for up to 10(6) s suggest a retention of more than ten years.

引用

页码：185 / 187

页数：3

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